PART |
Description |
Maker |
MT46V32M16P-5BC MT46V32M16BN-6C |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 32M X 16 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 16M X 16 DDR DRAM, 0.7 ns, PBGA60 Double Data Rate (DDR) SDRAM
|
Micron Technology
|
H5PS5162GFR-S5L H5PS5162GFR-S5I H5PS5162GFR-S5J H5 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84 7.50 X 12.50 MM, ROHS COMPLIANT, FBGA-84 32M X 16 DDR DRAM, 0.45 ns, PBGA84
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
HY5PS121621CFP-C4I HY5PS12821CFP-C4I HY5PS121621CF |
512Mb DDR2 SDRAM 32M X 16 DDR DRAM, 0.45 ns, PBGA84 128M X 4 DDR DRAM, 0.45 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
HY5DU12822DTP-D43 HY5DU12822DLTP-D43 HY5DU12822DLT |
32M X 16 DDR DRAM, 0.75 ns, PDSO66 64M X 8 DDR DRAM, 0.75 ns, PDSO66 512Mb DDR SDRAM
|
HYNIX SEMICONDUCTOR INC
|
K4H561638N-LCB3T00 K4H560838N-LLB30 |
N-die DDR SDRAM 32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Samsung semiconductor
|
V58C2512164SBI5 V58C2512804SBJ5 V58C2512804SBLE5 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 64M X 8 DDR DRAM, 0.7 ns, PBGA60 64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
AS4DDR32M72PBG1-6_ET AS4DDR32M72PBG1-6_IT AS4DDR32 |
32M X 72 DDR DRAM, 0.8 ns, PBGA208 16 X 23 MM, 1 MM PITCH, PLASTIC, BGA-208 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor, Inc
|
W9751G6IB-25 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84
|
WINBOND ELECTRONICS CORP
|
E5116ABSE-4C-E |
32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
ELPIDA MEMORY INC
|
HYS64D32300GU-5-C |
32M X 64 DDR DRAM MODULE, 0.5 ns, DMA184
|
QIMONDA AG
|
|